Researchers at the Energy Department’s National Renewable Energy Laboratory (NREL) have uncovered a way to overcome a principal obstacle in using two-dimensional (2D) semiconductors in electronic and optoelectronic devices. 2D semiconductors such as molybdenum disulfide are only a few layers thick and are considered promising candidates for next-generation devices. Scientists first must overcome limitations imposed by a large and tunable Schottky barrier between the semiconductor and a metal ...